VISHAY · FETs & Power MOSFETs · MPN SQ3985EV-T1_GE3
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| Current - Continuous Drain(Id) | 3.9A |
|---|---|
| RDS(on) | 300mΩ@1.8V |
| Pd - Power Dissipation | 3W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 350pF |
| Gate Charge(Qg) | 4.6nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 110pF |
3.9A 300mΩ@1.8V 3W 1.5V 2 P-Channel TSOP-6-1.5mm FET, MOSFET Arrays RoHS