VISHAY SQ3985EV-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ3985EV-T1_BE3

No reviews yet — be the first to review VISHAY SQ3985EV-T1_BE3.

Specifications

Current - Continuous Drain(Id)3.9A
Pd - Power Dissipation3W
RDS(on)130mΩ@4.5V
Gate Threshold Voltage (Vgs(th))600mV
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 P-Channel
Input Capacitance(Ciss)235pF
Gate Charge(Qg)3.1nC@4.5V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)75pF

Technical details

P-Channel 20V 3.9A 3W Surface Mount TSOP-6

Related FETs & Power MOSFETs