VISHAY · FETs & Power MOSFETs · MPN SQ3585EV-T1_GE3
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| Current - Continuous Drain(Id) | 3.57A;2.5A |
|---|---|
| RDS(on) | 77mΩ@4.5V;166mΩ@4.5V |
| Pd - Power Dissipation | 560mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 1.8nC@4.5V;2.4nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
N-Channel+P-Channel Array 20V 3.57A 2.5A 0.56W Surface Mount TSOP-6