VISHAY SQ3495EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3495EV-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)29nC@4.5V
Output Capacitance(Coss)285pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)285pF
RDS(on)21mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.95nF
TypeP-Channel

Technical details

P-Channel 30V 8A 5W Surface Mount TSOP-6

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