VISHAY SQ3493EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3493EV-T1_GE3

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Specifications

Gate Charge(Qg)34nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)420pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation14.4W
Reverse Transfer Capacitance (Crss@Vds)405pF
RDS(on)32mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)3.3nF
TypeP-Channel

Technical details

P-Channel 20V 8A 14.4W Surface Mount TSOP-6

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