VISHAY SQ3469EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3469EV-T1_GE3

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)36mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.02nF

Technical details

20V 8A 2.5V 5W 36mΩ@10V 1 P-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS

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