VISHAY · FETs & Power MOSFETs · MPN SQ3460EV-T1_GE3
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| Gate Charge(Qg) | 14nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
20V 8A 1V 3.6W 1 N-channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS