VISHAY SQ3457EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3457EV-T1_GE3

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)3.9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)35mΩ@10V;72mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)705pF
TypeP-Channel

Technical details

P-Channel 30V 3.9A 1.7W Surface Mount TSOP-6

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