VISHAY SQ3427EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3427EV-T1_GE3

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)95mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1nF
TypeP-Channel

Technical details

P-Channel 60V 5.3A 1.6W Surface Mount TSOP-6

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