VISHAY SQ3425EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3425EV-T1_GE3

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Specifications

Gate Charge(Qg)10.3nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)178pF
Current - Continuous Drain(Id)7.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)49mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)840pF
TypeP-Channel

Technical details

P-Channel 20V 7.4A 5W Surface Mount TSOP-6

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