VISHAY · FETs & Power MOSFETs · MPN SQ3419AEEV-T1_BE3
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| Gate Charge(Qg) | 12.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 61mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 975pF |
40V 6.9A 2V 1.6W 61mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS