VISHAY SQ3418EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3418EV-T1_GE3

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Specifications

Gate Charge(Qg)12.7nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)678pF

Technical details

N-Channel 40V 8A 5W Surface Mount TSOP-6

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