VISHAY · FETs & Power MOSFETs · MPN SQ3418AEEV-T1_GE3
No reviews yet — be the first to review VISHAY SQ3418AEEV-T1_GE3.
| Gate Charge(Qg) | 3.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 32mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 528pF |
40V 8A 1.5V 5W 32mΩ@10V 1 N-channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS