VISHAY SQ3410EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3410EV-T1_GE3

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)17.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)804pF
TypeN-Channel

Technical details

N-Channel 30V 8A 5W Surface Mount TSOP-6

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