VISHAY SQ3410EV-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ3410EV-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)17.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.005nF

Technical details

30V 8A 2.5V 5W 17.5mΩ@10V 1 N-channel TSOP-6 Single FETs, MOSFETs RoHS

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