VISHAY SQ2398ES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2398ES-T1_GE3

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Specifications

Gate Charge(Qg)3.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)152pF
TypeN-Channel

Technical details

N-Channel 100V 1.6A 2W Surface Mount SOT-23

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