VISHAY · FETs & Power MOSFETs · MPN SQ2389ES-T1_GE3
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| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 84mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 360pF |
| Type | P-Channel |
P-Channel 40V 4.1A 3W Surface Mount SOT-23