VISHAY SQ2389ES-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ2389ES-T1_BE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)188mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)420pF
TypeP-Channel

Technical details

P-Channel 40V 4.1A 3W Surface Mount SOT-23-3(TO-236-3)

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