VISHAY · FETs & Power MOSFETs · MPN SQ2364EES-T1_GE3
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| Gate Charge(Qg) | 2.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 240mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
| Type | N-Channel |
N-Channel 60V 2A 3W Surface Mount SOT-23