VISHAY · FETs & Power MOSFETs · MPN SQ2362ES-T1_GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 63pF |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 75mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
N-Channel 60V 4.3A 3W Surface Mount SOT-23