VISHAY SQ2362ES-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ2362ES-T1_BE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
RDS(on)68mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF

Technical details

60V 4.3A 2.5V 3W 68mΩ@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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