VISHAY · FETs & Power MOSFETs · MPN SQ2362CES-T1_GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 8.1nC@10V |
| Current - Continuous Drain(Id) | 4.3A |
| Output Capacitance(Coss) | 48pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 57mΩ@10V;62mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 462pF |
| Type | N-Channel |
60V 4.3A 2V 3W 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS