VISHAY SQ2361CES-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2361CES-T1-GE3

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)177mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 P-Channel
Input Capacitance(Ciss)380pF
TypeP-Channel

Technical details

60V 2.8A 2.5V 2W 177mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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