VISHAY SQ2361AEES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2361AEES-T1_GE3

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)170mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)620pF

Technical details

P-Channel 60V 2.8A 2W Surface Mount SOT-23-3

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