VISHAY SQ2351CES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2351CES-T1_GE3

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Specifications

Output Capacitance(Coss)75pF
Pd - Power Dissipation2W
Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)3.4nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)115mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 P-Channel
Input Capacitance(Ciss)265pF

Technical details

2W 20V 1V 115mΩ@4.5V 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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