VISHAY · FETs & Power MOSFETs · MPN SQ2337CES-T1_GE3
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| Gate Charge(Qg) | 9.3nC@40V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 39pF |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 241mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 382pF |
| Type | P-Channel |
80V 2.2A 2V 3W 241mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS