VISHAY SQ2325ES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2325ES-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)10nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)840mA
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)1.77Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)250pF

Technical details

P-Channel 150V 0.84A 3W Surface Mount SOT-23

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