VISHAY · FETs & Power MOSFETs · MPN SQ2319CES-T1-GE3
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| Output Capacitance(Coss) | 89pF |
|---|---|
| Pd - Power Dissipation | 3W |
| Configuration | - |
| Gate Charge(Qg) | 11nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 68mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 491pF |
3W 40V 2V 68mΩ@10V 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS