VISHAY SQ2319ADS-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2319ADS-T1_GE3

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation8.4W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)145mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)620pF
TypeP-Channel

Technical details

P-Channel 40V 4.6A 8.4W Surface Mount SOT-23

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