VISHAY SQ2318CES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2318CES-T1_GE3

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Specifications

Gate Charge(Qg)8.9nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)82pF
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)31mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 N-channel
Input Capacitance(Ciss)494pF
TypeN-Channel

Technical details

40V 7A 2V 3W 31mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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