VISHAY SQ2318AES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2318AES-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)13nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)99pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)36mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)553pF

Technical details

N-Channel 40V 8A 3W Surface Mount SOT-23

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