VISHAY SQ2315ES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2315ES-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)335pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation670mW
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)50mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)870pF

Technical details

P-Channel 12V 5A 0.67W Surface Mount SOT-23

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