VISHAY · FETs & Power MOSFETs · MPN SQ2310ES-T1_GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8.5nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 54mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 485pF |
N-Channel 20V 6A 0.6W Surface Mount SOT-23