VISHAY SQ2310CES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2310CES-T1_GE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.5nC@4.5V
Output Capacitance(Coss)106pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)38mΩ@1.8V
Input Capacitance(Ciss)426pF
TypeN-Channel

Technical details

N-Channel 20V 9A 2W Surface Mount SOT-23

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