VISHAY SQ2309CES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2309CES-T1_GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)8.5nC@10V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)500mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 P-Channel
Input Capacitance(Ciss)265pF
TypeP-Channel

Technical details

P-Channel 60V 1.7A 2W Surface Mount SOT-23

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