VISHAY SQ2308FES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2308FES-T1_GE3

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Specifications

Output Capacitance(Coss)25pF
Pd - Power Dissipation2W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)3.6nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)150mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)170pF

Technical details

2W 60V 2V 150mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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