VISHAY SQ2308CES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2308CES-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)5.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation600mW
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)325mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)205pF

Technical details

N-Channel 60V 2.3A 0.6W Surface Mount SOT-23

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