VISHAY · FETs & Power MOSFETs · MPN SQ2308CES-T1_BE3
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| Gate Charge(Qg) | 5.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 205pF |
| Type | N-Channel |
60V 2.3A 2.5V 600mW 150mΩ@10V 1 N-channel N-Channel SOT-23-3(TO-236-3) Single FETs, MOSFETs RoHS