VISHAY SQ2303ES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2303ES-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)370mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)210pF

Technical details

P-Channel 30V 2.5A 1.9W Surface Mount SOT-23

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