VISHAY SQ2301ES-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ2301ES-T1_GE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8nC@4.5V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)3.9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)120mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)425pF
TypeP-Channel

Technical details

P-Channel 20V 3.9A 3W Surface Mount SOT-23

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