VISHAY · FETs & Power MOSFETs · MPN SQ1922AEEH-T1_GE3
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| Current - Continuous Drain(Id) | 850mA |
|---|---|
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 300mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 60pF |
| Gate Charge(Qg) | 1.2nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
850mA 1.5W 300mΩ@4.5V 2.5V 2 N-Channel SC-70-6 FET, MOSFET Arrays RoHS