VISHAY · FETs & Power MOSFETs · MPN SQ1912EH-T1_GE3
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| Current - Continuous Drain(Id) | 800mA |
|---|---|
| Pd - Power Dissipation | 500mW |
| RDS(on) | 360mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 75pF |
| Gate Charge(Qg) | 760pC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 32pF |
N-Channel Array 20V 0.8A 0.5W Surface Mount SC-70-6