VISHAY · FETs & Power MOSFETs · MPN SQ1912AEEH-T1_GE3
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| Current - Continuous Drain(Id) | 800mA |
|---|---|
| RDS(on) | 280mΩ@4.5V |
| Pd - Power Dissipation | 1.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 27pF |
| Gate Charge(Qg) | 1.25nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
800mA 280mΩ@4.5V 1.5W 1.5V 2 N-Channel SOT-363-6 FET, MOSFET Arrays RoHS