VISHAY · FETs & Power MOSFETs · MPN SQ1563AEH-T1_GE3
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| Current - Continuous Drain(Id) | 850mA |
|---|---|
| RDS(on) | 280mΩ@4.5V;575mΩ@4.5V |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 67pF;63pF |
| Gate Charge(Qg) | 930pC@10V;1nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 22pF;26pF |
850mA 500mW 600mV 1 N-Channel + 1 P-Channel SOT-363-6 FET, MOSFET Arrays RoHS