VISHAY SQ1539EH-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ1539EH-T1_GE3

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Specifications

Current - Continuous Drain(Id)850mA
RDS(on)280mΩ@10V;940mΩ@10V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)6pF;5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)38pF;40pF
Gate Charge(Qg)1nC@4.5V;1.2nC@4.5V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)14pF

Technical details

N-Channel+P-Channel 30V 0.85A 1.5W Surface Mount SOT-363

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