VISHAY · FETs & Power MOSFETs · MPN SIZF918DT-T1-GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 50W |
| RDS(on) | 4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.65nF |
| Gate Charge(Qg) | 37nC@10V |
| Operating Temperature | -55℃~+150℃ |
60A 50W 4mΩ@10V 2.4V 2 N-Channel PowerPAIR-8(6x5) FET, MOSFET Arrays RoHS