VISHAY · FETs & Power MOSFETs · MPN SIZF916DT-T1-GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 60W |
| RDS(on) | 6.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.32nF |
| Gate Charge(Qg) | 29.3nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.84nF |
60A 60W 6.8mΩ@4.5V 2.4V 2 N-Channel FET, MOSFET Arrays RoHS