VISHAY · FETs & Power MOSFETs · MPN SIZF914DT-T1-GE3
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| Current - Continuous Drain(Id) | 23.5A |
|---|---|
| RDS(on) | 0.9mΩ@10V |
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.05nF |
| Gate Charge(Qg) | 6.6nC@10V |
| Operating Temperature | -55℃~+150℃ |
23.5A 0.9mΩ@10V 2.4V 2 N-Channel PowerPAIR(6x5) FET, MOSFET Arrays RoHS