VISHAY · FETs & Power MOSFETs · MPN SIZF906ADT-T1-GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| RDS(on) | 5.3mΩ@4.5V |
| Pd - Power Dissipation | 83W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 8.2nF |
| Gate Charge(Qg) | 92nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 3.7nF |
60A 5.3mΩ@4.5V 83W 2.2V 2 N-Channel FET, MOSFET Arrays RoHS