VISHAY · FETs & Power MOSFETs · MPN SIZF640DT-T1-GE3
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 159A |
| RDS(on) | 2.4mΩ@4.5V |
| Pd - Power Dissipation | 62.5W |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 5.75nF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
159A 2.4mΩ@4.5V 62.5W 2.4V 2 N-Channel FET, MOSFET Arrays RoHS